| Spannung - Kollektor-Emitter-Durchbruch (max): | 40V |
|---|---|
| Transistor-Typ: | NPN |
| Supplier Device-Gehäuse: | TO-92-3 |
| Serie: | - |
| Leistung - max: | 350mW |
| Verpackung: | Tape & Box (TB) |
| Verpackung / Gehäuse: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Betriebstemperatur: | - |
| Rauschzahl (dB Typ @ f): | - |
| Befestigungsart: | Through Hole |
| Gewinnen: | - |
| Frequenz - Übergang: | 1.1GHz |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 65 @ 1mA, 10V |
| Strom - Kollektor (Ic) (max): | 50mA |
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