| VGS (th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | TO-220AB |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 500mA, 10V |
| Verlustleistung (max): | 460W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-220-3 |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Eingabekapazität (Ciss) (Max) @ Vds: | 4500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Drain-Source-Spannung (Vdss): | 250V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 76A (Tc) |
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