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| Preis | |
|---|---|
| 1 | $3.05 |
| 10 | $2.743 |
| 100 | $2.205 |
| 500 | $1.811 |
| VGS (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | H²PAK |
| Serie: | DeepGATE™, STripFET™ VII |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 55A, 10V |
| Verlustleistung (max): | 150W (Tc) |
| Verpackung: | Original-Reel® |
| Verpackung / Gehäuse: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
| Betriebstemperatur: | -55°C ~ 175°C (TJ) |
| Befestigungsart: | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds: | 5117pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 100V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 110A (Tc) |
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